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Fakultät für Elektrotechnik und Informationstechnik
Forschung

Konferenz- und Journalbeiträge


2023

Jahn, N.Pfost, M.: A Machine Learning Model for the Detection of Solder Voids with Adjacent Sensors, Thermal Investigations of ICs and Systems (THERMINIC), Budapest, 09.2023, doi: 10.1109/THERMINIC60375.2023.10325910

Jahn, N.Pfost, M.: Thermal Onboard Detection of Voids in the Solder Layer Between Power Semiconductor and PCB , in IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 13, no. 8, pp. 1104-1112, Aug. 2023, doi: 10.1109/TCPMT.2023.3299788

Krigar, T.; Pfost, M.Soft Start and Overload Protection of a 2MHz Wireless Power Transfer System without Communication between Transmitter and Receiver, 2023 IEEE Wireless Power Technology Conference and Expo (WPTCE), doi: 10.1109/WPTCE56855.2023.10215827

Choo, V.L.; Pfost, M.A Variable Gate Resistance SiC MOSFET Driver Network to Mitigate Overshoot and Parasitic Ringing, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe 2023), Nürnberg, Germany, 05.2023, DOI: 10.30420/566091153

Schulte, F.; Pfost, M.Experimental Investigation of the Impact of Soft Switching on Capacitive Bearing Currents in SiC-Based Motor Drives, 2023 IEEE International Electric Machines & Drives Conference (IEMDC), San Francisco, CA, USA , 05.2023, DOI: 10.1109/IEMDC55163.2023.10239030

Jahn, N.Pfost, M.: Efficient Simulation fo the Effect of Solder Voids and Tilting on the Cooling of Power Semiconductors , 2023 International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) , Graz, Austria, 03.2023, doi: 10.1109/EuroSimE56861.2023.10100817

2022

Jahn, N.Pfost, M.: Detection of Bond Wire Failure in Power Semiconductors by Adjacent Temperature Sensors , 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC), Singapur, 12.2022, doi: 10.1109/EPTC56328.2022.10013223

Oeder, T.; Pfost, M.: Threshold Voltage Behavior and Short-Circuit Capability of p-Gate GaN HEMTs Depending on Drain- and Gate-Voltage Stress, IEEE Workshop on Wide Bandgap Power Devices and Applications,  Los Angeles CA, USA, 10.2022, doi: 10.1109/WiPDA56483.2022.9955266

Oeder, T.Pfost, M.Schwellenspannung und Zuverlässigkeit von p-Gate GaN HEMTs, Halbleiterkolloquium, Freiburg, 10.2022

Jahn, N.Pfost, M.: Fehlerdetektion in der AVT von Leistungshalbleitern durch benachbarte Temperatursensoren, Halbleiterkolloquium 2022, Freiburg, 10.2022

Jahn, N.Pfost, M.: Void Detection in the Solder Layer between Power Semiconductor and PCB, Thermal Investigations of ICs and Systems (THERMINIC), Dublin, 09.2022, doi: 10.1109/THERMINIC57263.2022.9950678

Lenzen, P.; Pfost, M.: Optimized Control Scheme to Achieve ZVS for the Complete Pre-Charging Phase of Supercapacitors with a 500 kHz SiC- and GaN-Based Dual Active Bridge, European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hannover, Germany, 09.2022, ISBN: 978-9-0758-1539-9

Pötter, J.Pfost, M.; Schullerus, Gernot: "Experimental Investigation of a New Type of Harmonic-Excited Synchronous Machine under Special Consideration of the Core Loss," IEEE International Conference on Electrical Machines (ICEM), Valencia, Spain, September.2022, doi: folgt.

Krigar, T.; Pfost, M.Adaptive Dead-Time Control in a Resonant Wireless Power Transfer System, 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), ISBN: 978-9-0758-1539-9.

Jahn, N.Pfost, M.: Size Determination of Voids in the Soldering of Automotive DC/DC-Converters via IR Thermography, Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), San Diego, 31.05. - 03.06.2022, doi: https://doi.org/10.1109/iTherm54085.2022.9899529

Lenzen, P.; Pfost, M.: 500 kHz SiC- and GaN-based Dual Active Bridge with Voltage Conversion between 48 V and 650 V, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe 2022), Nürnberg, Germany, 05.2022, DOI: 10.30420/565822014

Krigar, T.; Pfost, M.Optimization of a 2 MHz 500 W Compact Wireless Power Transfer System with a Large Voltage Conversion Ratio, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe 2022), Nürnberg, Germany, 05.2022, DOI: 10.30420/565822106.

2021

K. Pilgrim, P. Lenzen and M. Pfost, "Filter Design for DC Grids with Distributed Link Capacitors," NEIS 2021; Conference on Sustainable Energy Supply and Energy Storage Systems, 2021, pp. 1-5.

Oeder, T.Pfost, M.Schwellenspannungs-Instabilitäten von p-Gate GaN HEMTs, Halbleiterkolloquium, Freiburg, 10.2021

Jahn, N.Pfost, M.: Detektion von Lufteinschlüssen in der Aufbau- und Verbindungstechnik von Halbleiterbauelementen, Halbleiterkolloquium 2021, Freiburg, 10.2021

Oeder, T.; Pfost, M.: Gate-Induced Threshold Voltage Instabilities in p-gate GaN HEMTs, IEEE Transaction on Electron Devices (Journal), 09.2021, doi: 10.1109/TED.2021.3098254

Lenzen, P.; Pilgrim, K.Pfost, M.DC Conductor Rail with Distributed DC Link Capacitors, IEEE Fourth International Conference on DC Microgrids (ICDCM2021), Arlington (virtuell), VA, USA, 07.2021, DOI: 10.1109/ICDCM50975.2021.9504672

Choo, V.L.; Pfost, M.Reverse Recovery and Carrier Lifetime in Body Diodes of LDMOS Transistors, ISPSD2021- The 33rd International Symposium on Power Semiconductor Devices and ICs, Nagoya, JPN, 05.2021, DOI: 10.23919/ISPSD50666.2021.9452223

Krigar, T.; Pfost, M.2-MHz Compact Wireless Power Transfer System With Voltage Conversion From 400 V to 48 V, 2021 IEEE Wireless Power Transfer Conference (WPTC), doi: 10.1109/WPTC51349.2021.9457887

Pötter, J.Pfost, M.; Schullerus, Gernot: "Topology Analysis of Harmonic-Excited Wound-Rotor Synchronous Machines," IEEE International Electric Machines & Drives Conference (IEMDC), Online, 2021, doi:10.1109/IEMDC47953.2021.9449529.

 

Pötter, J.Pfost, M.; Schullerus, GernotDynamic Modeling of a New Type of Harmonic-Excited Synchronous Machine, VDE Antriebstechnik, Online, November.2021

2020

Unger, C.; Pfost, M.Particularities of the Short-Circuit Operation and Failure Modes of SiC-MOSFETs, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, doi: 10.1109/JESTPE.2021.3053127

Lange, S.Pfost, M.: Analysis of the Structural Mechanical Behaviour of the Stator End-Winding Region under Influence of Ageing Phenomena, VDE Hochspannungstechnik Tagung 2020, Berlin (virtuell), 11.2020

Oeder, T.; Pfost, M.: Gate-Stress-Induced Threshold Voltage Instabilites, a Comparison of Ohmic and Schottky p-Gate GaN HEMTs, IEEE Workshop on Wide Bandgap Power Devices and Applications,  Kyoto, JPN, 10.2020, doi: 10.1109/WiPDAAsia49671.2020.9360288

Jahn, N.Pfost, M.: Solder Defect Detection for Power Semiconductors by Adjacent Temperature Monitors, Thermal Investigations of ICs and Systems (THERMINIC), Berlin (virtuell), 09.2020, doi: https://doi.org/10.1109/THERMINIC49743.2020.9420522

Unger, C.; Pfost, M.Investigation of Gate and Drain Leakage Currents During the Short Circuit of SiC-MOSFETs, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, doi: 10.1109/ISPSD46842.2020.9170074

Pötter, J.Pfost, M.; Schullerus, GernotHarmonic Excitation Concepts for Wound-Rotor Synchronous Machines with Power-Electronics on the Rotor, ICEM, virtuelle Konferenz, Schweden, 08.2020, doi: 10.1109/ICEM49940.2020.9270724

Lange, S.Pfost, M.: Impact of Design Aspects on the Vibrational Behaviour of the Stator End-Winding Region of Large Turbogenerators, International Conference on Electrical Machines (ICEM), Göteborg (virtuell), 08.2020, doi: 10.1109/ICEM49940.2020.9271041

Schlueter, M.; Pfost, M.: Operating a du/dt Filter with a SiC Halfbridge Module and Integrated Active Snubber, CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany, 2020

Schlüter, M. ; Uhlemann, A. ; Pfost, M.: A Medium Power SiC Module with Integrated Active Snubber for Lowest Switching Losses, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, LA, USA, 2020, doi: 10.1109/APEC39645.2020.9124178

2019

Unger, C.; Pfost, M.Thermal Stability of SiC-MOSFETs at High Temperatures, IEEE Transactions on Electron Devices, 11. 2019, doi: 10.1109/TED.2019.2942011

Oeder, T.; Pfost, M.: Applikationsrelevante Auswirkungen von Ladungsträger Trapping, ein Vergleich von Ohmschen und Schottky p-Gate GaN HEMTs , Halbleiterkolloquium, Freiburg, 10.2019

Lange, S.Pfost, M.: Analysis of the Thermal Influence on the Vibrational Behavior of the Stator End-Winding Region, Aegean Conference on Electrical Machines and Power Electronics & Optimization of Electrical & Electronic Equipment Conference (ACEMP & OPTIM), Istanbul (Türkei), 08.2019, doi: 10.1109/ACEMP-OPTIM44294.2019.9007121

Oeder, T.; Pfost, M.: Impact of Carrier Accumulation on the Transient Behavior of p-Gate GaN HEMTs , ISPSD2019 - The 31th International Symposium on Power Semiconductor Devices and ICs, Shanghai, CHN, 05.2019, doi: 10.1109/ISPSD.2019.8757570

Oeder, T.; Pfost, M.; D'Aniello, F.; Fayyaz, A.; Castellazzi, A.: Damage Accumulation in GaN GITs Exposed to Repetitive Short-Circuit , ISPSD2019 - The 31th International Symposium on Power Semiconductor Devices and ICs, Shanghai, CHN, 05.2019, doi: 10.1109/ISPSD.2019.8757692

Unger, C.; Pfost, M.Determination of the Transient Threshold Voltage Hysteresis in SiC MOSFETs after Positive and Negative Gate Bias, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, doi: 10.1109/ISPSD.2019.8757661

Lange, S.Pfost, M.: Validation and Verification of a Structural Mechanical Stator End-Winding Region Model , International Electrical Machines & Drives Conference (IEMDC), San Diego (USA), 05.2019, doi: 10.1109/IEMDC.2019.8785374

Pötter, J.Pfost, M.; Prof. Dr.-Ing Schullerus, GernotDesign Aspects of a Novel Brushless Excitation System for Synchronous Machines, IEMDC, San Diego, California, Mai.2019, doi: 10.1109/IEMDC.2019.8785200

Pötter, J.Pfost, M.; Schullerus, GernotA Novel Brushless Excitation System for Synchronous Machines with a Rotating Power Converter, CPE Powereng, Sonderborg, Denmark, April.2019, doi: 10.1109/CPE.2019.8862391

Hackel J.; Pfost, M.: Improved Inductive Feed-Forward for Fast Turn-On of Power Semiconductors during Hard Switching, IEEE European Conference on Power Electronics and Applications, 2019, doi: 10.23919/EPE.2019.8914861

Hackel J.; Pfost, M.: Novel Design for a Coreless Printed Circuit Board Transformer realizing High Bandwidth and Coupling, IEEE European Conference on Power Electronics and Applications, 2019, doi: 10.23919/EPE.2019.8915055

2018

Unger, C.; Pfost, M.: A Comparison of the Transient Behavior of the Drain Current Hysteresis in SiC-MOSFETs, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nottingham, 2018, doi: 10.1109/ESARS-ITEC.2018.8607785

Oeder, T.; Pfost, M.: Einfluss akkumulierter Ladung auf das transiente Verhalten bei p-Gate GaN HEMTs , Halbleiterkolloquium, Freiburg, 10.2018

Lange, S.Pfost, M.: Analysis of Damping Models in a Structural Mechanical 3D-FE Stator End-Winding Region Model , International Conference on Electrical Machines (ICEM), Alexandroupoli, 09.2018, doi: 10.1109/ICELMACH.2018.8506877

Unger, C.Pfost, M.Influence of the Off-State Gate-Source Voltage on the Transient Drain Current Response in SiC MOSFETs, ISPSD2018 - The 30th International Symposium on Power Semiconductor Devices and ICs , Chicago, USA , 05.2018, doi: 10.1109/ISPSD.2018.8393599

Oeder, T.; Pfost, M.; Castellazzi, A. ; Fayyaz, A. ; Zhu, S.: Single pulse short-circuit robustness and repetitive stress aging of GaN GITs , Reliability Physics Symposium (IRPS), 2018 IEEE International, Burlingame, CA, USA, 03.2018, doi: 10.1109/IRPS.2018.8353593

Ebli, M.; Hackel J.; Pfost, M.: A Novel Gate Driving Approach to Balance the Transient Current of Parallel-Connected GaN-HEMTs, IEEE International Conference on Integrated Power Electronic Systems, 2018, ISBN: 978-3-8007-4540-1

Ebli, M.; Pfost, M.: A Gate Driver Approach using Inductive Feedback to Decrease the Turn-on Losses of Power Transistors, IEEE International Exhibition and Conference for Power Electronics, 2018, ISBN: 978-3-8007-4646-0

Ebli, M.; Pfost, M.: A Novel Gate Driver Approach Using an Inductive Feed Forward for a Robust Turn-on of GaN Power Transistors with Gate Injection, IEEE European Conference on Power Electronics and Applications, 2018, ISBN: 978-9-0758-1528-3

2017

Oeder, T.; Pfost, M.: Elektrisch limitierende Eigenschaften von 600 V p-Gate GaN HEMTs , Halbleiterkolloquium, Freiburg, 10.2017

Oeder, T.; Pfost, M.; Castellazzi, A.: Electrical and thermal failure modes of 600 V p-gate GaN HEMTs , ESREF2017 - 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, FRA, 07.2017, Microelectronics Reliability (Journal), doi: 10.1016/j.microrel.2017.06.046

Oeder, T.; Pfost, M.; Castellazzi, A.: Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMTs , ISPSD2017 - The 29th International Symposium on Power Semiconductor Devices and ICs, Sapporo, JPN, 06.2017, doi: 10.23919/ISPSD.2017.7988925

Unger, C.Pfost, M.; Mocanu, M.; Waltereit, P.; Reiner, R.Pulse robustness of AlGaN/GaN HEMTs with Schottky- and MIS-gates, ISPSD2017 - The 29th International Symposium on Power Semiconductor Devices and ICs, Sapporo, JPN, 06.2017, doi: 10.23919/ISPSD.2017.7988915

Unger, C.Pfost, M.; Mocanu, M.; Unger, C.; Pfost, M.; Waltereit, P.; Reiner, R.Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, 01.2017, doi: 10.1109/TED.2016.2633725

2016

Unger, C.Pfost, M.; Mocanu, M.; Waltereit, P.; Reiner, R.Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs, International Semiconductor Conference (CAS), Sinaia, Romania, 10.2016, doi: 10.1109/SMICND.2016.7783060

Unger, C.Pfost, M.Energy capability of SiC MOSFETs, ISPSD2016 - The 28th International Symposium on Power Semiconductor Devices and ICs , Prague, Czech Republic , 06.2016, doi: 10.1109/ISPSD.2016.7520831