M.Sc. Christian Unger

Unger, C.; Pfost, M.: Particularities of the Short-Circuit Operation and Failure Modes of SiC-MOSFETs, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, doi: 10.1109/JESTPE.2021.3053127

Unger, C.; Pfost, M.: Investigation of Gate and Drain Leakage Currents During the Short Circuit of SiC-MOSFETs, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, doi: 10.1109/ISPSD46842.2020.9170074

Unger, C.; Pfost, M.: Thermal Stability of SiC-MOSFETs at High Temperatures, IEEE Transactions on Electron Devices, 11. 2019, doi: 10.1109/TED.2019.2942011

Unger, C.; Pfost, M.: Determination of the Transient Threshold Voltage Hysteresis in SiC MOSFETs after Positive and Negative Gate Bias, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, doi: 10.1109/ISPSD.2019.8757661

Unger, C.; Pfost, M.: A Comparison of the Transient Behavior of the Drain Current Hysteresis in SiC-MOSFETs, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nottingham, 2018, doi: 10.1109/ESARS-ITEC.2018.8607785

Unger, C.; Pfost, M.: Influence of the Off-State Gate-Source Voltage on the Transient Drain Current Response in SiC MOSFETs, ISPSD2018 - The 30th International Symposium on Power Semiconductor Devices and ICs , Chicago, USA , 05.2018, doi: 10.1109/ISPSD.2018.8393599

Unger, C.; Pfost, M.; Mocanu, M.; Waltereit, P.; Reiner, R.: Pulse robustness of AlGaN/GaN HEMTs with Schottky- and MIS-gates, ISPSD2017 - The 29th International Symposium on Power Semiconductor Devices and ICs, Sapporo, JPN, 06.2017, doi: 10.23919/ISPSD.2017.7988915

Unger, C.; Pfost, M.; Mocanu, M.; Unger, C.; Pfost, M.; Waltereit, P.; Reiner, R.: Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, 01.2017, doi: 10.1109/TED.2016.2633725

Unger, C.; Pfost, M.; Mocanu, M.; Waltereit, P.; Reiner, R.: Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs, International Semiconductor Conference (CAS), Sinaia, Romania, 10.2016, doi: 10.1109/SMICND.2016.7783060

Unger, C., Pfost, M.: Energy capability of SiC MOSFETs, ISPSD2016 - The 28th International Symposium on Power Semiconductor Devices and ICs , Prague, Czech Republic , 06.2016, doi: 10.1109/ISPSD.2016.7520831